dm p2088l c p3 document number: ds 38475 rev. 3 - 2 1 of 7 www.diodes.com august 2017 ? diodes incorporated dm p2088l c p3 20v p - channel enhancement mode mosfet product summary bv dss r ds(on) m ax i d t a = + 25c - 2 0 v 88 m? @ v gs = - 8 v - 2 . 9 a 1 05 m? @ v gs = - 4 .5v - 1 . 8 a description this new generation mosfet is designed to minimize the footprint in handheld and mobile application. it can be used to replace many small signals mosfet with as really small footprint. applications ? battery management ? load switch ? battery protection ? handheld and mobile application features and benefits ? low q g & q gd ? small footprint ? low profile 0. 3 0 mm h eight ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note ? qualified to aec - q101 standards for high reliability mechanical data ? case: x2 - dsn 10 06 - 3 ? terminal connections: see diagram below ? terminals: finish C matte tin annealed over copper pillar ordering information (note 4 ) part number case packaging dm p2088 l c p3 - 7 x2 - dsn 10 06 - 3 3000/tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/e c (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green " pr oducts are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging det ails, go to our website at https://www.diodes.com/design/support/packaging/diodes - packaging/ . marking information date code key year 2014 2015 2016 2017 2018 2019 2020 2021 2022 2023 2024 2025 code b c d e f g h i j k l m month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d x 2 - dsn 10 06 - 3 equivalent circuit b = product type marking code ym = date code marking y or y = year (ex: e = 201 7 ) m or m = month (ex: 9 = september) top view esd protected to 4kv e3
dm p2088l c p3 document number: ds 38475 rev. 3 - 2 2 of 7 www.diodes.com august 2017 ? diodes incorporated dm p2088l c p3 maximum ratings ( @ t a = +25c, unless otherwise specified.) characteristic symbol value unit drain - source voltage v dss - 2 0 v gate - source voltage v gss - 12 v continuous drain current (note 5 ) v gs = - 8 v steady state t a = + 25c t a = + 70 c i d - 2 . 9 - 2 . 4 a contin uous drain current (note 5 ) v gs = - 4 .5v steady state t a = + 25c t a = + 70 c i d - 1 . 8 - 1 . 4 a pulsed drain current (note 6 ) i dm - 15 a human body model (hbm) v (esd) 4 k v thermal characteristics characteristic symbol value unit power dissipation (not e 7 ) p d 0. 5 7 w thermal resistance, junction to ambient @t a = + 25c (note 7 ) r ja 2 17 c/w power dissipation (note 5 ) p d 1. 13 w thermal resistance, junction to ambient @t a = + 25c (note 5 ) r ja 110 c/w operating and storage temperature range t j , t stg - 55 to +150 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss - 2 0 gs = 0v, i d = - 250a j = + 25c i dss - 100 n a v ds = - 16 v, v gs = 0v gate - source leakage i gss - 50 n a v gs = - 12 v , v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs( th ) - 0. 7 - 1 . 0 - 1. 2 v v ds = v gs , i d = - 250 a ds (on) 7 3 88 m gs = - 8 v, i d = - 0.5 a gs = - 4.5v, i d = - 0.5 a 1 43 1 74 v gs = - 2.5v, i d = - 0.5 a 2 66 750 v gs = - 1 . 8 v, i d = - 0. 1 a forward transfer admittance |y fs | 3.4 ds = - 10 v , i d = - 0.5 a diode forward voltage v sd - 0.7 5 - 1 . 0 v v gs = 0v, i s = - 0.5 a reverse recovery charge q rr 1.0 nc v dd = - 1 0 v, i f = - 1 a, di/dt = 1 00a/s rr 5 .7 ns dynamic characteristics (note 9 ) input capacitance c iss 121 1 60 pf v ds = - 10 v , v gs = 0v , f = 1 .0mhz output capacitance c oss 6 6 reverse transfer capacitance c rss 4 . 3 series gate resistance r g 9 18 36 gs = 0v, v ds = 0v total gate charge q g 1. 1 1. 5 n c v gs = - 4.5 v, v ds = - 1 0 v , i d = - 0.5 a gate - source charge q gs 0. 17 gate - drain charge q gd 0. 2 2 gate charge at v th q g (th) 0. 1 2 turn - on delay time t d( on ) 6 . 3 12 ns v d s = - 1 0 v , v gs = - 4 .5 v, r g = 2 d = - 0.5 a turn - on rise time t r 2. 8 turn - off delay time t d( off ) 17 34 turn - off fall time t f 6 notes: 5 . device mounted on fr - 4 material with 1 - inch 2 (6.45 - cm 2 ), 2 - oz. (0.071 - mm thick) cu . 6 . repetitive rating, pulse width limited by junction temperature. 7. device mounted on fr - 4 pcb with minimum recommended pad layout, single sided . 8 . short duration pulse test used to minimize self - heating effect . 9 . guaranteed by design. not subject to production testing.
dm p2088l c p3 document number: ds 38475 rev. 3 - 2 3 of 7 www.diodes.com august 2017 ? diodes incorporated dm p2088l c p3 0.0 4.0 8.0 12.0 16.0 20.0 0 0.5 1 1.5 2 2.5 3 i d , drain current (a) v ds , drain - source voltage (v) fig ure 1. typical output characteristic v gs = - 1.5v v gs = - 1.8v v gs = - 2.0v v gs = - 2.5v v gs = - 3.0v v gs = - 3.5v v gs = - 4.5v v gs = - 8.0v 0 2 4 6 8 10 0 1 2 3 4 i d , drain current (a) v gs , gate - source voltage (v) figure 2. typical transfer characteristic v ds = - 5 v - 55 o c 25 o c 85 o c 125 o c 150 o c 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0 2 4 6 8 10 r ds(on) , drain - source on - resistance ( ? d , drain - source current (a) figure 3. typical on - resistance vs. drain current and gate voltage v gs = - 2.5v v gs = - 4.5v v gs = - 8.0v 0.04 0.06 0.08 0.1 0.12 0.14 0 2 4 6 8 10 r ds(on) , drain - source on - resistance ( ? d , drain current (a) figure 4. typical on - resistance vs. drain current and junction temperature v gs = - 8 v - 55 o c 25 o c 85 o c 125 o c 150 o c 0.6 0.8 1 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance (normalized) t j , junction temperature ( gs = - 4.5v, i d = - 500ma v gs = - 8v, i d = - 500ma 0.04 0.06 0.08 0.1 0.12 0.14 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance ( ? j , junction temperature ( gs = - 4.5v, i d = - 500ma v gs = - 8v, i d = - 500ma
dm p2088l c p3 document number: ds 38475 rev. 3 - 2 4 of 7 www.diodes.com august 2017 ? diodes incorporated dm p2088l c p3 0.4 0.6 0.8 1 1.2 1.4 - 50 - 25 0 25 50 75 100 125 150 v gs(th) , gate threshold voltage (v) t j , junction temperature ( d = - 1ma i d = - 250 a 0 2 4 6 8 10 0 0.3 0.6 0.9 1.2 1.5 i s , source current (a) v sd , source - drain voltage (v) figure 8. diode forward voltage vs. current v gs = 0v t j = - 55 o c t j = 25 o c t j = 85 o c t j = 125 o c t j = 150 o c 1 10 100 1000 0 5 10 15 20 c t , junction capacitance (pf) v ds , drain - source voltage (v) figure 9. typical junction capacitance f = 1mhz c iss c oss c rss 0 2 4 6 8 0 0.5 1 1.5 2 v gs (v) q g (nc) figure 10. gate charge v ds = - 10v, i d = - 0.5a 0.01 0.1 1 10 100 0.1 1 10 100 i d , drain current (a) v ds , drain - source voltage (v) figure 11. soa, safe operation area t j (max) =150 c = 25 gs = - 8 v single pulse dut on 1*mrp b oard r ds(on) limited dc p w =10s p w =1s p w =100ms p w =10ms p w =1ms p w =100 s
dm p2088l c p3 document number: ds 38475 rev. 3 - 2 5 of 7 www.diodes.com august 2017 ? diodes incorporated dm p2088l c p3 0 50 100 150 200 250 300 1e - 05 0.0001 0.001 0.01 0.1 1 10 100 1000 p (pk) , peak transient power (w) t1, pulse duration time (sec) figure 12. single pulse maximum power dissipation single pulse r ja = 217 ja (t) = r ja * r(t) t j - t a = p * r ja (t) 0.001 0.01 0.1 1 1e - 05 0.0001 0.001 0.01 0.1 1 10 100 1000 r(t), transient thermal resistance t1, pulse duration time (sec) figure 13. transient thermal resistance r ja (t) = r(t) * r ja r ja = 217
dm p2088l c p3 document number: ds 38475 rev. 3 - 2 6 of 7 www.diodes.com august 2017 ? diodes incorporated dm p2088l c p3 package outline d imensions please see http://www.diodes.com/package - outlines.html for the latest version. x 2 - dsn1006 - 3 suggested pad layout please see http://www.diodes.com/package - outlines.html for the latest version. x 2 - dsn1006 - 3 x2 - dsn1006 - 3 dim min max typ a -- 0.348 0. 3 2 a1 -- -- 0.08 b 0.14 0.16 0.15 b2 0.49 0.51 0.50 d 0.56 0.64 0.60 e 0.96 1.04 1.00 e -- -- 0.3 5 e1 -- -- 0.65 k -- -- 0.325 l 0.2 1 0. 29 0.25 la 0.2 1 0.2 9 0.25 all dimensions in mm dimensions value (in mm) g 0.30 g1 0.20 x 0.25 x1 0.70 y 0.40 y1 1.10 x1 y1 y g x g1 e d k l la e b e1 b2 a a1 seating plane pin #1
dm p2088l c p3 document number: ds 38475 rev. 3 - 2 7 of 7 www.diodes.com august 2017 ? diodes incorporated dm p2088l c p3 important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied w arranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability a rising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applic ations shall assume all risks of such use and will agree to hold diodes incorporated and al l the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. pro duct names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this d ocument is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or system s without the express written approva l of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any comp onent in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in th e safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporate d products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporat ed and its rep resentatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 7 , diodes incorporated www.diodes.com
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